參數(shù)資料
型號: HS-302RH-T
廠商: Intersil Corporation
英文描述: Radiation Hardened CMOS Dual DPST Analog Switch(抗輻射CMOS雙路雙刀單擲模擬開關(guān))
中文描述: 輻射加固CMOS雙雙刀單擲模擬開關(guān)(抗輻射的CMOS雙路雙刀單擲模擬開關(guān))
文件頁數(shù): 2/2頁
文件大?。?/td> 26K
代理商: HS-302RH-T
2
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Die Characteristics
DIE DIMENSIONS:
(2130
μ
m x 1930
μ
m x 279
μ
m
±
25.4
μ
m)
84 x 76 x 11mils
±
1mil
METALLIZATION:
Type: Al
Thickness: 12.5k
±
2k
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Gold
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 8k
±
1k
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
76
PROCESS:
Metal Gate CMOS, Dielectric Isolation
Metallization Mask Layout
HS-302RH-T
D3
D1
S1
IN1
N
G
V
D4
D2
S2
IN2
S
V
S
HS-302RH-T
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