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參數(shù)資料
| 型號： | HS-2100RH |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened High Frequency Half Bridge Driver(抗輻射高頻半橋N勾道MOSFET驅(qū)動(dòng)器) |
| 中文描述： | 高頻輻射加固半橋驅(qū)動(dòng)器（抗輻射高頻半橋?勾道MOSFET的驅(qū)動(dòng)器） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 73K |
| 代理商： | HS-2100RH |
2
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4710
μ
m x 3570
μ
m (186 mils x 141 mils)
Thickness: 483
μ
m
±
25.4
μ
m (19 mils
±
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
±
1.0k
Top Metallization:
Type: ALSiCu
Thickness: 16.0k
±
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
125
Metallization Mask Layout
HS-2100RH
SD (13)
LIN (14)
V
SS
(15)
LO (1)
COM (2)
V
CC
(3)
HIN (12)
V
DD
(11)
HO (8)
VB (7)
VS (6)
HS-2100RH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HS9-2100RH-8 | Radiation Hardened High Frequency Half Bridge Driver |
| HS9-2100RH-Q | Radiation Hardened High Frequency Half Bridge Driver |
| HS9-22620RH | Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier |
| HS-22620RH | Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier(抗輻射寬帶、高非補(bǔ)償輸入阻抗運(yùn)算放大器) |
| HS0-22620RH-Q | Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HS210A10K00T | 制造商:Ohmite Mfg Co 功能描述:WIREWOUND RESISTOR |
| HS210A1M000A | 制造商:OHMITE 制造商全稱:Ohmite Mfg. Co. 功能描述:Hermetically Sealed Precision Ultra-High Stability Axial Terminals |
| HS210A1M000B | 制造商:OHMITE 制造商全稱:Ohmite Mfg. Co. 功能描述:Hermetically Sealed Precision Ultra-High Stability Axial Terminals |
| HS210A1M000F | 制造商:OHMITE 制造商全稱:Ohmite Mfg. Co. 功能描述:Hermetically Sealed Precision Ultra-High Stability Axial Terminals |
| HS210A1M000Q | 制造商:OHMITE 制造商全稱:Ohmite Mfg. Co. 功能描述:Hermetically Sealed Precision Ultra-High Stability Axial Terminals |
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