參數(shù)資料
型號(hào): HS-1212RH
廠商: HARRIS SEMICONDUCTOR
元件分類: 運(yùn)動(dòng)控制電子
英文描述: Radiation Hardened, Dual, High Speed Low Power, Video Closed Loop Buffer
中文描述: DUAL BUFFER AMPLIFIER, CDIP8
封裝: CERDIP-8
文件頁數(shù): 8/9頁
文件大?。?/td> 107K
代理商: HS-1212RH
8
Burn-In Circuit
HS-1212RH CERDIP
NOTES:
1. R1 = 1k
,
±
5% (Per Socket).
2. C1 = C2 = 0.01
μ
F (Per Socket) or 0.1
μ
F (Per Row) Minimum.
3. D1 = D2 = 1N4002 or Equivalent (Per Board).
4. D3 = D4 = 1N4002 or Equivalent (Per Socket).
5. |(-V)| + |(+V)| = 11V
±
1.0V.
6. 10mA < | I
CC
, I
EE
| < 16mA.
7. -50mV < V
OUT
< +50mV.
Irradiation Circuit
HS-1212RH CERDIP
NOTES:
8. R1 = 1k
,
±
5%
9. C1=0.01
μ
F
10. V+ = +5.0V
±
0.5V
11. V- = -5.0V
±
0.5V
V+
C1
D1
D2
C2
V-
D4
D3
1
2
3
4
8
7
6
5
+
-
+-
R1
R1
C1
C1
V-
1
2
3
4
8
7
6
5
+
-
+-
R1
R1
V+
HS-1212RH
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