參數(shù)資料
型號: HS-1120RH
廠商: Intersil Corporation
英文描述: Radiation Hardened, Ultra High Speed Current Feedback Amplifier with Offset Adjust(抗輻射超高速電流反饋放大器(可調(diào)節(jié)漂移))
中文描述: 輻射加固,超高速電流反饋放大器的偏移調(diào)整(抗輻射超高速電流反饋放大器(可調(diào)節(jié)漂移))
文件頁數(shù): 11/11頁
文件大小: 119K
代理商: HS-1120RH
11
Die Characteristics
DIE DIMENSIONS:
63 mils x 44 mils x 19 mils
±
1 mil
1600
μ
m x 1130
μ
m x 483
μ
m
±
25.4
μ
m
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
±
0.4k
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
±
0.8k
GLASSIVATION:
Type: Nitride
Thickness: 4k
±
0.5k
WORST CASE CURRENT DENSITY:
1.6 x 10
5
A/cm
2
TRANSISTOR COUNT:
52
SUBSTRATE POTENTIAL (Powered Up):
Floating
Metallization Mask Layout
HS-1120RH
+IN
V-
V
L
BAL
OUT
-IN
BAL
V
H
V+
HS-1120RH
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
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