參數(shù)資料
型號: HRW36F
廠商: Hitachi,Ltd.
英文描述: Silicon Schottky Barrier Diode for High Frequency Rectifying(用于高頻整流的肖特基勢壘二極管)
中文描述: 硅肖特基二極管整流高頻(用于高頻整流的肖特基勢壘二極管)
文件頁數(shù): 2/3頁
文件大?。?/td> 22K
代理商: HRW36F
HRW36F
2
Absolute Maximum Ratings
(Ta = 25°C)
*
1
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
I
O
*
I
FSM
*
Tj
90
V
Average forward current
2
10
A
Non-Repetitive peak forward surge current
3
70
A
Junction temperature
125
°C
Storage temperature
Notes: 1. Per one device
2. Square wave, Duty (1/2), Tc = 95°C, Sum of two devices
3. Half sine wave 10msec
Tstg
–40 to +125
°C
Electrical Characteristics
(Ta = 25°C)
*
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F1
V
F2
I
R
0.6
V
I
F
= 2.0A
I
F
= 4.0A
V
R
= 90V
0.8
Reverse current
Note: Per one device
4.0
mA
0
0.4
1.0
10
10
1.0
0.2
10
10
0.6
0.8
–3
–2
–1
F
F
Forward voltage V (V)
1.2
1.4
Pulse test
Fig.1 Forward current Vs. Forward voltage
相關(guān)PDF資料
PDF描述
HRW34F Silicon Schottky Barrier Diode for High Frequency Rectifying(用于高頻整流的肖特基勢壘二極管)
HRW36
HRW36F
HRW37F
HRW37F Silicon Schottky Barrier Diode for High Frequency Rectifying(用于高頻整流的肖特基勢壘二極管)
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