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參數(shù)資料
| 型號(hào)： | HRW26F |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Schottky Barrier Diode for High Frequency Rectifying(用于高頻整流的肖特基勢(shì)壘二極管) |
| 中文描述： | 硅肖特基二極管整流高頻（用于高頻整流的肖特基勢(shì)壘二極管） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 22K |
| 代理商： | HRW26F |
HRW26F
2
Absolute Maximum Ratings
(Ta = 25°C)
*
1
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
I
O
*
I
FSM
*
Tj
40
V
Average forward current
2
10
A
Non-Repetitive peak forward surge current
3
70
A
Junction temperature
125
°C
Storage temperature
Notes: 1. Per one device
2. Square wave, Duty (1/2), Tc = 95°C, Sum of two devices
3. Half sine wave 10msec
Tstg
–40 to +125
°C
Electrical Characteristics
(Ta = 25°C)
*
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
—
—
0.55
V
I
F
= 4.0A
V
R
= 40V
Reverse current
Note: Per one device
—
—
1.0
mA
0
0.4
1.0
10
10
1.0
0.2
10
10
0.6
0.8
–3
–2
–1
F
F
Forward voltage V (V)
Pulse test
Fig.1 Forward current Vs. Forward voltage
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