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參數(shù)資料
| 型號(hào)： | HRW0202A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢(shì)壘二極管) |
| 中文描述： | 硅肖特基二極管整頓（用于整流的肖特基勢(shì)壘二極管） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | HRW0202A |
HRW0202A
2
Absolute Maximum Ratings (Ta = 25°C)
*1
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
V
RRM
*2
20
V
Average rectified current
I
O
I
FSM
*2
200
mA
Non-Repetitive peak
forward surge current
*3
3
A
Junction temperature
Tj
125
°C
Storage temperature
Notes 1. Two device total
Notes 2. See from Fig.4 to Fig.7
Notes 3. 10msec sine wave 1 pulse
Tstg
–55 to +125
°C
Electrical Characteristics (Ta = 25°C)
*1
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
R
th(j-a)
—
—
0.40
V
I
F
= 100 mA
V
R
= 20V
Reverse current
—
—
50
μA
Thermal resistance
Notes 1. Per one device
Notes 2. Polyimide board
—
350
—
°
C/W Polyimide board
*2
0
3
Unit: mm
1.5
1.5
1
20hx15wx0.8t
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HRW0202B | Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢(shì)壘二極管) |
| HRW0202 | Silicon Schottky Barrier Diode for Rectifying |
| HRW0203A | Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢(shì)壘二極管) |
| HRW0203B | |
| HRW0302A | Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢(shì)壘二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HRW0202A-E | 制造商:Renesas Electronics Corporation 功能描述:HRW0202A-E |
| HRW0202ATL-E | 制造商:Renesas Electronics Corporation 功能描述:Diode Schottky 20V 0.2A 3-Pin MPAK T/R |
| HRW0202B | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for Rectifying |
| HRW0202B(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| HRW0202B-E | 制造商:Renesas Electronics Corporation 功能描述:HRW0202B-E |
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