參數(shù)資料
型號： HP4936DY
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 5.8A, 30V, 0.037 Ohm, Dual N-Channel,Logic Level Power MOSFET(5.8A, 30V, 0.037 Ω,雙N溝道,邏輯電平功率MOS場效應(yīng)管)
中文描述： 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 2/5頁
文件大小： 84K
代理商： HP4936DY
8-9
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
HP4936DY
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (10
μ
s Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30
V
30
V
±
16
V
5.8
30
A
A
2
0.02
W
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
-55 to 150
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
A
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
30
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 9)
1
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
A
= 55
o
C
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 4.7A, V
GS
= 4.5V (Figures 6, 8)
-
0.042
0.055
I
D
= 5.8A, V
GS
= 10V (Figures 6, 8)
-
0.030
0.037
Turn-On Delay Time
t
d(ON)
V
DD
= 15V, I
D
1A,
R
L
= 15
, V
GEN
=
10V,
R
GS
= 6
(Figures 12, 13)
-
10
16
ns
Rise Time
t
r
-
10
16
ns
Turn-Off Delay Time
t
d(OFF)
-
27
40
ns
Fall Time
t
f
-
24
35
ns
Total Gate Charge
Q
g
V
DS
= 15V, V
GS
= 10V, I
D
5.8A
(Figures 14, 15)
-
18
25
nC
Gate to Source Charge
Q
gs
-
4.5
-
nC
Gate to Drain Charge
Q
gd
-
2.5
-
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 4)
-
625
-
pF
Output Capacitance
C
OSS
-
270
-
pF
Reverse Transfer Capacitance
C
RSS
-
50
-
pF
Thermal Resistance Junction to Ambient
R
θ
JA
Pulse Width <10s (Figure 11)
Device Mounted on FR-4 Material
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 1.7A (Figure 7)
-
0.8
1.2
V
Reverse Recovery Time
t
rr
I
SD
= 1.7A, dI
SD
/dt = 100A/
μ
s
-
45
80
ns
HP4936DY
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