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參數(shù)資料
| 型號： | HN58V66AI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) |
| 中文描述： | 64畝的EEPROM（8 KWord的× 8位）（64畝的EEPROM（8K的字× 8位）） |
| 文件頁數(shù)： | 11/30頁 |
| 文件大?。?/td> | 203K |
| 代理商： | HN58V66AI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁
HN58V65AI Series, HN58V66AI Series, HN58V65A-SR Series,
HN58V66A-SR Series
11
Write Cycle 2
(V
CC
= 4.5 to 5.5 V)
Parameter
Symbol
Min*
3
Typ
Max
Unit
Test conditions
Address setup time
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
t
RP
t
RES
0
—
—
ns
Address hold time
CE
to write setup time (
WE
controlled)
CE
hold time (
WE
controlled)
WE
to write setup time (
CE
controlled)
WE
hold time (
CE
controlled)
OE
to write setup time
OE
hold time
50
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
Data setup time
50
—
—
ns
Data hold time
WE
pulse width (
WE
controlled)
CE
pulse width (
CE
controlled)
0
—
—
ns
100
—
—
ns
100
—
—
ns
Data latch time
50
—
—
ns
Byte load cycle
0.2
—
30
μ
s
μ
s
Byte load window
100
—
—
Write cycle time
—
—
10*
4
ms
Time to device busy
120
—
—
ns
Write start time
0*
5
—
—
ns
Reset protect time*
2
100
—
—
μ
s
μ
s
Reset high time*
2, 6
Notes: 1. t
and t
are defined as the time at which the outputs achieve the open circuit conditions and
are no longer driven.
2. This function is supported by only the HN58V66A.
3. Use this device in longer cycle than this value.
4. t
must be longer than this value unless polling techniques or RDY/
Busy
are used. This device
automatically completes the internal write operation within this value.
5. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/
Busy
are used.
6. This parameter is sampled and not 100% tested.
7. A6 through A12 are page address and these addresses are latched at the first falling edge of
WE
.
8. A6 through A12 are page address and these addresses are latched at the first falling edge of
CE
.
9. See AC read characteristics.
1
—
—
相關PDF資料 |
PDF描述 |
|---|---|
| HN58V65AP-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V66AP-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V65AT-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V66AT-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V65AFP-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HN58V66AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V66AP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V66AP10E | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:EEPROM,Parallel,64K,70/100ns,DIP28 制造商:Renesas 功能描述:EEPROM Parallel 64K-bit 8K x 8 3.3V/5V 28-Pin PDIP |
| HN58V66AP-10E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A) |
| HN58V66API-10 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version |
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