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參數(shù)資料
| 型號： | HN58V66AFPI-10 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version |
| 中文描述： | 64K的EEPROM的（8 KWord的× 8位）就緒/忙功能水庫功能（HN58V66A）寬溫版本 |
| 文件頁數(shù)： | 10/27頁 |
| 文件大?。?/td> | 127K |
| 代理商： | HN58V66AFPI-10 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁當(dāng)前第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁
HN58V65A Series, HN58V66A Series
Write Cycle 2
(V
CC
= 4.5 to 5.5 V)
Parameter
Symbol
Min*
3
Typ
Max
Unit
Test conditions
Address setup time
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
t
RP
t
RES
0
—
—
ns
Address hold time
CE
to write setup time (
WE
controlled)
CE
hold time (
WE
controlled)
WE
to write setup time (
CE
controlled)
WE
hold time (
CE
controlled)
OE
to write setup time
OE
hold time
50
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
Data setup time
50
—
—
ns
Data hold time
WE
pulse width (
WE
controlled)
CE
pulse width (
CE
controlled)
0
—
—
ns
100
—
—
ns
100
—
—
ns
Data latch time
50
—
—
ns
Byte load cycle
0.2
—
30
μ
s
μ
s
Byte load window
100
—
Write cycle time
—
—
10*
4
ms
Time to device busy
120
—
—
ns
Write start time
0*
5
—
—
ns
Reset protect time*
2
100
—
—
μ
s
μ
s
Reset high time*
2, 6
Notes: 1. t
and t
DFR
are defined as the time at which the outputs achieve the open circuit conditions
and
are no longer driven.
2. This function is supported by only the HN58V66A series.
3. Use this device in longer cycle than this value.
4. t
must be longer than this value unless polling techniques or RDY/
Busy
are used. This
device automatically completes the internal write operation within this value.
5. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/
Busy
are
used.
6. This parameter is sampled and not 100% tested.
7. A6 through A12 are page addresses and these addresses are latched at the first falling edge
of
WE
.
8. A6 through A12 are page addresses and these addresses are latched at the first falling edge
of
CE
.
9. See AC read characteristics.
1
—
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58V65A | 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) |
| HN58V66A | 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) |
| HN58X2402FP-SR | Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM |
| HN58X2402-SR | Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM |
| HN58X2402T-SR | Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58V66AFPI-10E | 制造商:Renesas Electronics Corporation 功能描述: |
| HN58V66AI | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version |
| HN58V66AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V66AP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V66AP10E | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:EEPROM,Parallel,64K,70/100ns,DIP28 制造商:Renesas 功能描述:EEPROM Parallel 64K-bit 8K x 8 3.3V/5V 28-Pin PDIP |
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