參數(shù)資料
型號(hào)： HN58V257A
廠商： Hitachi,Ltd.
英文描述： 256k EEPROM (32-kword ×8-bit)(256k EEPROM (32k字 ×8位))
中文描述： 256k的EEPROM（32 KWord的× 8位）（256k的EEPROM（32K的字× 8位））
文件頁(yè)數(shù)： 16/26頁(yè)
文件大?。?/td> 170K
代理商： HN58V257A
HN58V256A Series HN58V257A Series
16
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30
μ
s from the preceding falling edge of
WE
or
CE
.
When
CE
or
WE
is high for 100
μ
s after data input, the EEPROM enters write mode automatically and the
input data are written into the EEPROM.
Data
Polling
Data
polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read
mode during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the
EEPROM is performing a write operation.
RDY/
Busy
Signal (
only the HN58V257A series
)
RDY/
Busy
signal also allows the status of the EEPROM to be determined. The RDY/
Busy
signal has high
impedance except in write cycle and is lowered to V
OL
after the first write signal. At the end of a write
cycle, the RDY/
Busy
signal changes state to high impedance.
RES
Signal (
only the HN58V257A series
)
When
RES
is low, the EEPROM cannot be read or programmed. Therefore, data can be protected by
keeping
RES
low when V
CC
is switched.
RES
should be high during read and programming because it
doesn't provide a latch function.
V
Program inhibit
CC
RES
Program inhibit
Read inhibit
Read inhibit
相關(guān)PDF資料
PDF描述
HN58V65AI 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位))
HN58V66AI 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位))
HN58V65AP-10 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)
HN58V66AP-10 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)
HN58V65AT-10 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN58V257ASERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM
HN58V257AT-12 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V257AT12E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:EEPROM,Parallel,256K,3V,120ns,TSOP32 制造商:Renesas 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3V 32-Pin TSOP
HN58V257AT-12E 制造商:Renesas 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3V 32-Pin TSOP
HN58V257R-30 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM
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