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參數(shù)資料
| 型號(hào)： | HN58V256AFP-12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A) |
| 中文描述： | 256k的EEPROM（32 KWord的× 8位）就緒/忙和RES功能（HN58V257A） |
| 文件頁數(shù)： | 17/24頁 |
| 文件大?。?/td> | 118K |
| 代理商： | HN58V256AFP-12 |
HN58V256A Series, HN58V257A Series
17
WE
,
CE
Pin Operation
During a write cycle, addresses are latched by the falling edge of
WE
or
CE
, and data is latched by the rising
edge of
WE
or
CE
.
Write/Erase Endurance and Data Retention Time
The endurance is 10
5
cycles in case of the page programming and 10
4
cycles in case of the byte programming
(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-
programmed less than 10
4
cycles.
Data Protection
1. Data Protection against Noise on Control Pins (
CE
,
OE
,
WE
) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake.
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 20 ns
or less.
Be careful not to allow noise of a width of more than 20 ns on the control pins.
WE
CE
OE
V
0 V
V
0 V
20 ns max
IH
IH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58V256AT-12 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A) |
| HN58V257AT-12 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A) |
| HN58V257A | 256k EEPROM (32-kword ×8-bit)(256k EEPROM (32k字 ×8位)) |
| HN58V65AI | 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) |
| HN58V66AI | 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58V256AFP-12E | 制造商:Renesas Electronics Corporation 功能描述:EEPROM Parallel 256K-bit 32K x 8 3V 28-Pin SOP |
| HN58V256AFPI-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V256AFPI-12E | 制造商:Renesas Electronics Corporation 功能描述: |
| HN58V256AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V256ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
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