參數(shù)資料
型號(hào): HN58S256A
廠商: Hitachi,Ltd.
英文描述: 256 k EEPROM (32-kword x 8-bit)
中文描述: 256畝的EEPROM(32 KWord的× 8位)
文件頁數(shù): 6/17頁
文件大?。?/td> 88K
代理商: HN58S256A
HN58S256A Series
Write Cycle
Parameter
Symbol
Min
*
2
Typ
Max
Unit
Test conditions
Address setup time
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DW
0
ns
Address hold time
CE
to write setup time (
WE
controlled)
CE
hold time (
WE
controlled)
WE
to write setup time (
CE
controlled)
WE
hold time (
CE
controlled)
OE
to write setup time
OE
hold time
150
ns
0
ns
0
ns
0
ns
0
ns
0
ns
0
ns
Data setup time
150
ns
Data hold time
WE
pulse width (
WE
controlled)
CE
pulse width (
CE
controlled)
0
ns
200
ns
200
ns
Data latch time
200
ns
Byte load cycle
0.4
30
μ
s
μ
s
Byte load window
100
Write cycle time
15*
3
ms
Write start time
Notes: 1. t
is defined as the time at which the outputs achieve the open circuit conditions and are no
longer driven.
2. Use this device in longer cycle than this value.
3. t
must be longer than this value unless polling techniques is used. This device automatically
completes the internal write operation within this value.
4. Next read or write operation can be initiated after t
DW
if polling techniques is used.
5. A6 through A14 are page addresses and these addresses are latched at the first falling edge
of
WE
.
6. A6 through A14 are page addresses and these addresses are latched at the first falling edge
of
CE
.
7. See AC characteristics.
0*
4
ns
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