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參數(shù)資料
| 型號(hào)： | HN2S03FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Application |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 192K |
| 代理商： | HN2S03FU |
HN2S03FU
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S03FU
High Speed Switching Application
z
HN2S03FU is composed of 3 independent diodes.
z
Low forward voltage
z
Low reverse current
z
Small total capacitance
Absolute Maximum Ratings
(Ta = 25°C)
: V
F
(3)
= 0.50V (typ.)
: I
R
= 0.5
μ
A (max)
: C
T
= 3.9pF (typ.)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V
RM
25
V
Reverse voltage
V
R
20
V
Maximum (peak) forward current
I
FM
100
*
mA
Average forward current
I
O
50
*
mA
Surge current (10ms)
I
FSM
1
*
A
Power dissipation
P
200
**
mW
Junction temperature
T
j
125
°
C
Storage temperature range
T
stg
55
～
125
°
C
Operating temperature range
T
opr
40
～
110
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 or 3 diodes, the absolute maximum ratings
per diodes is 75
%
of the single diode one.
** :Total rating
Electrical Characteristics
(Q1, Q2, Q3 Common, Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
F
(1)
―
I
F
= 1mA
―
0.33
―
V
F
(2)
―
I
F
= 5mA
―
0.38
―
Forward voltage
V
F
(3)
―
I
F
= 50mA
―
0.50
0.55
V
Reverse current
I
R
―
V
R
= 20V
―
―
0.5
μ
A
Total capacitance
C
T
―
V
R
= 0, f = 1MH
z
―
3.9
―
pF
JEDEC
EIAJ
TOSHIBA
Weight: 6.2mg(Typ.)
―
―
1-2T1C
Unit: mm
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| HN2S03T | High Speed Switching Application |
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| HN2V02HA | ARRAY OF INDEPENDENT DIODES|SO |
| HN2V02HB | ARRAY OF INDEPENDENT DIODES|SO |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN2S03FU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:SBD Diode,Vr=20V,Io=0.05A,US6 |
| HN2S03FUTE85LF | 制造商:Toshiba America Electronic Components 功能描述:DIODE SCHOTTKY 20V 50MA US6 |
| HN2S03T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Application |
| HN2S03T(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:Diode Small Signal Schottky 25V 0.05A 4-Pin TESQ T/R 制造商:Toshiba America Electronic Components 功能描述:SBD Diode,Vr=20V,Io=0.05A,TESQ 制造商:Toshiba 功能描述:Diode Small Signal Schottky 25V 0.05A 4-Pin TESQ T/R |
| HN2S04FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Application |
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