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參數(shù)資料
| 型號： | HN2D01F |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 0.08 A, 3 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | SC-74, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 148K |
| 代理商： | HN2D01F |
HN2D01F
2001-06-05
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01F
Ultra High Speed Switching Application
z
HN2D01F is composed of 3 independent diodes.
z
Low forward voltage
z
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z
Small total capacitance
Maximum Ratings
(Ta = 25
°
C)
: V
F (3)
= 0.98V (typ.)
: C
T
= 0.5
μ
F (typ.)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V
RM
85
V
Reverse voltage
V
R
80
V
Maximum (peak) forward current
I
FM
240 (
*
)
mA
Average forward current
I
O
80 (
*
)
mA
Surge current (10ms)
I
FSM
1 (
*
)
A
Power dissipation
P
300
mW
Junction temperature
T
j
125
°
C
Storage temperature range
T
stg
55
～
125
°
C
(*)
This is maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the maximum ratings
per diodes is 75
%
of the single diode one.
Electrical Characteristics
(Q1, Q2, Q3 Common Ta = 25
°
C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
F
(1)
―
I
F
= 1mA
―
0.62
―
V
F
(2)
―
I
F
= 10mA
―
0.75
―
Forward voltage
V
F
(3)
―
I
F
= 100mA
―
0.98
1.20
V
I
R (1)
―
V
R
= 30V
―
―
0.1
Reverse current
I
R (2)
―
V
R
= 80V
―
―
0.5
μA
Total capacitance
C
T
―
V
R
= 0, f = 1MH
z
―
0.5
3.0
pF
Reverse recovery time
trr
―
I
F
= 10mA (Fig.1)
―
1.6
4.0
ns
JEDEC
―
EIAJ
SC-74
1-3K1C
TOSHIBA
Weight: 0.015g
Unit in mm
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