參數(shù)資料
型號(hào): HN29W25611T-50H
廠商: Hitachi,Ltd.
英文描述: 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
中文描述: 256M超過16057型快閃記憶體部門(271299072位)
文件頁(yè)數(shù): 17/42頁(yè)
文件大小: 331K
代理商: HN29W25611T-50H
HN29W25611T-50H
17
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Notes
V
CC
voltage
V
SS
voltage
All input and output voltages
V
CC
V
SS
Vin, Vout
–0.6 to +7
V
1
0
V
–0.6 to +7
V
1, 2
Operating temperature range
Topr
0 to +70
C
Storage temperature range
Tstg
–65 to +125
C
3
Storage temperature under bias
Notes: 1. Relative to V
SS
.
2. Vin, Vout = –2.0 V for pulse width
20 ns.
3. Device storage temperature range before programming.
Tbias
–10 to +80
C
Capacitance
(Ta = 25C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance
Cin
6
pF
Vin = 0 V
Output capacitance
Cout
12
pF
Vout = 0 V
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