參數(shù)資料
型號(hào)： HN29W12811BP-60
英文描述： EEPROM|AND FLASH|16896KX8|CMOS|BGA|72PIN|PLASTIC
中文描述： EEPROM的|和FLASH | 16896KX8 |的CMOS | BGA封裝| 72PIN |塑料
文件頁(yè)數(shù)： 1/43頁(yè)
文件大小： 321K
代理商： HN29W12811BP-60
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
HN29W12811BP Series
128M AND type Flash Memory
More than 8,029-sector (135,657,984-bit)
ADE-203-1260 (Z)
Rev. 0.0
Apr. 18, 2001
Description
The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all
sector address).
Features
On-board single power supply (V
CC
): V
CC
= 3.3 V
±
0.3 V
Organization
AND Flash Memory: (2048 + 64) bytes
×
(More than 8,029 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 2.5 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
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