- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371864 > HN1B26FS (Toshiba Corporation) General-Purpose Amplifier Applications PDF資料下載
參數(shù)資料
| 型號： | HN1B26FS |
| 廠商： | Toshiba Corporation |
| 英文描述： | General-Purpose Amplifier Applications |
| 中文描述： | 通用放大器應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 170K |
| 代理商： | HN1B26FS |
HN1B26FS
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1B26FS
General-Purpose Amplifier Applications
Q1
High voltage and high current
: V
CEO
= 50 V, I
C
= 100 mA (max)
Excellent h
FE
linearity : h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
High h
FE :
h
FE
= 120~400
Q2
High voltage and high current
: V
CEO
=
50 V, I
C
=
100 mA (max)
Excellent h
FE
linearity :
h
FE
(I
C
=
0.1 mA)/h
FE
(I
C
=
2 mA) =
0.95 (typ.)
High h
FE :
h
FE
= 120~400
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Base current
I
B
30
mA
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Base current
I
B
30
mA
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
50*
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 0.0008 g (typ.)
fS6
0
0.1±0.05
6
0.8±0.05
1.0±0.05
0
1
2
0.1±0.05
0
0
3
1
0
5
4
0
+
-
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN1C01FE | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1C01FGR | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1C01FUGR | JIS C 5432 standard waterproof connectors; HRS No: 114-2163-7 71; Shell Size (dia): 25; Operating Temperature Range (degrees C): -25 to 85; General Description: Cap |
| HN1C01FUY | JIS C 5432 standard waterproof connectors; HRS No: 114-2172-8 00 |
| HN1C01FY | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN1C01F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1C01F_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio-Frequency General-Purpose Amplifier Applications |
| HN1C01FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1C01FE-GR(5L,F,T | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL NPN 50V 0.15A ES6 |
| HN1C01FE-GR(T5L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN Dual 50V 0.15A hfe200 ES6 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。