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| 型號： | HMPS650 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | HMPS650 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMPS650
NPN SILICON TRANSISTOR
Spec. No. : HE6327-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 1/4
HSMC Product Specification
Description
The HMPS650 is designed for audio transistor.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCEO Collector to Emitter Voltage..................................................................................... 40 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current.............................................................................................................. 2 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
VBE(on)
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
ft
Min.
40
60
5
-
-
-
-
-
-
75
75
75
40
75
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.5
0.3
1
1.2
-
-
-
-
-
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
IC=10mA, IB=0
IC=100uA, IE=0
IE=10uA, IC=0
VCB=60V, IE=0
VEB=4V, IC=0
IC=2A, IB=200mA
IC=1A, IB=100mA
VCE=2V, IC=1A
IC=1A, IB=100mA
VCE=2V, IC=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=5V, IC=50mA, f=100MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
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