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參數(shù)資料
| 型號(hào)： | HMMC-5040 |
| 英文描述： | 20-40 GHz Broadband MMIC Amplifier(20-40 GHz寬頻單片微波集成電路放大器) |
| 中文描述： | 20-40 GHz的寬帶MMIC放大器（20-40千兆赫寬頻單片微波集成電路放大器） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | HMMC-5040 |
20–40 GHz Amplifier
Technical Data
Features
Large Bandwidth:
20 - 44 GHz Typical
21 - 40 GHz Specified
High Gain:
22 dB Typical
Saturated Output Power:
21 dBm Typical
Supply Bias:
≤
4.5 volts @
≤
300 mA
Description
The HMMC-5040 is a high-gain
broadband MMIC amplifier
designed for both military appli-
cations and commercial commu-
nication systems. This four stage
amplifier has input and output
matching circuitry for use in
50 ohm environments. It is
fabricated using a PHEMT
integrated circuit structure that
provides exceptional broadband
performance. The backside of the
chip is both RF and DC ground.
This helps simplify the assembly
process and reduces assembly
related performance variations
and costs. This MMIC is a cost
effective alternative to hybrid
(discrete-FET) amplifiers that
require complex tuning and
assembly processes.
HMMC-5040
Absolute Maximum Ratings
[1]
Symbol
Parameters/Conditions
V
D1, 2-3-4
Drain Supply Voltages
V
G1, 2-3-4
Gate Supply Voltages
I
DD
Total Drain Current
P
in
RF Input Power
T
ch
Channel Temperature
[2]
T
A
Backside Ambient Temp.
T
STG
Storage Temperature
T
max
Maximum Assembl
y Temp.
Note:
1. Absolute maximum ratings for continuous operation unless otherwise noted.
2. Refer to DC Specifications/Physical Properties table for derating information.
Units
V
Min.
Max.
5
V
-3.0
0.5
mA
400
dBm
°
C
°
C
°
C
21
+160
-55
+75
-65
+165
°
C
+300
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1720 x 760
μ
m (67.7 x 29.9 mils)
±
10
μ
m (
±
0.4 mils)
127
±
15
μ
m (5.0
±
0.6 mils)
80 x 80
μ
m (3.1 x 3.1 mils)
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