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參數(shù)資料
| 型號： | HMC634 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 5000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 2.07 X 0.97 MM, 0.10 MM HEIGHT, DIE-7 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 285K |
| 代理商： | HMC634 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC634
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 20 GHz
v01.0308
General Description
Features
Functional Diagram
The HMC634 is a GaAs MMIC PHEMT Driver
Amplifier die which operates between 5 and 20 GHz.
The amplifier provides up to 22 dB of gain, +31 dBm
Output IP3, and up to +23 dBm of output power at 1 dB
gain compression, while requiring 180 mA from a +5V
supply. The HMC634 is an ideal driver amplifier for
microwave radio applications from 5 to 20 GHz, and
may be biased at +5V, 130 mA to provide 2 dB lower
gain with improved PAE. The HMC634 amplifier I/O’s
are DC blocked and internally matched to 50 Ohms
facilitating easy integration into Multi-Chip-Modules
(MCMs). All data is taken with die connected at input
and output RF ports via one 1 mil wedge bond with
minimal length of 0.31 mm (12 mils).
Gain: 22 dB
P1dB: +23 dBm
Output IP3: +31 dBm
Saturated Power: 24 dBm @ 23% PAE
Supply Voltage: +5 V @ 180 mA
50 Ohm Matched Input/Output
Die Size: 2.07 x 0.97 x 0.10 mm
Electrical Specifications, T
A = +25° C, Vdd1, Vdd2, Vdd3, Vdd4= 5V, Idd= 180mA
[1]
Typical Applications
The HMC634 is ideal for:
Point-to-Point Radios
Point- to-Multi-Point Radios & VSAT
LO Driver for Mixers
Military & Space
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
5 - 16
16 - 20
GHz
Gain
17
22
17
20
dB
Gain Variation Over Temperature
0.030
0.040
0.025
0.035
dB/ °C
Input Return Loss
12
9
dB
Output Return Loss
12
11
dB
Output Power for 1 dB Compression (P1dB)
21
23
18
21
dBm
Saturated Output Power (Psat)
24
22
dBm
Output Third Order Intercept (IP3)
31
30
dBm
Noise Figure
77.5
dB
Supply Current (Idd1 + Idd2 + Idd3 + Idd4)
180
mA
[1]
Adjust Vgg between -2 to 0V to achieve Idd = 180mA Typical
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