參數(shù)資料
型號: HMC609
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 2.10 X 1.30 MM, 0.10 MM HEIGHT, DIE-10
文件頁數(shù): 1/6頁
文件大?。?/td> 242K
代理商: HMC609
A
M
P
L
IF
IE
R
S
-
L
O
W
NO
IS
E
-
C
H
IP
1
1 - 108
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC609
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
General Description
Features
Functional Diagram
The HMC609 is a GaAs PHEMT MMIC Low Noise
Amplifier (LNA) chip which operates from 2 to 4 GHz.
The HMC609 features extremely flat performance
characteristics including 20 dB of small signal gain,
3.0 dB of noise figure and output IP3 of +36 dBm
across the operating band. This versatile LNA is ideal
for hybrid and MCM assemblies due to its compact
size, consistent output power and DC blocked RF I/
O’s. All data is measured with the chip in a 50 Ohm test
fixture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
Excellent Gain Flatness: ±0.2 dB
High Gain: 20.5 dB
Low Noise Figure: 3 dB
Output IP3: +36 dBm
Output P1dB: +22 dBm
50 Ohm Matched Input/Output
Die Size: 2.1 x 1.3 x 0.1 mm
Electrical Specifications, T
A = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170 mA *
Typical Applications
The HMC609 is ideal for:
Fixed Microwave
Point-to-Multi-Point Radios
Test & Measurement Equipment
Radar & Sensors
Military & Space
Parameter
Min.
Typ.
Max.
Units
Frequency Range
2 - 4
GHz
Gain
19
20.5
dB
Gain Variation Over Temperature
0.005
0.01
dB/ °C
Noise Figure
34
dB
Input Return Loss
20
dB
Output Return Loss
17
dB
Output Power for 1 dB
Compression (P1dB)
18
21
dBm
Saturated Output Power (Psat)
22
dBm
Output Third Order Intercept (IP3)
36
dBm
Supply Current (Idd1 + Idd2)
170
220
mA
*Adjust Vgg1 = Vgg2 between -1.5V to -0.5V (typ. -0.9V) to achieve total drain bias of 170mA
v03.0210
相關(guān)PDF資料
PDF描述
HMC611LP4E 1 MHz - 10000 MHz RF/MICROWAVE THRESHOLD DETECTOR, 15 dBm INPUT POWER-MAX
HMC611LP4 1 MHz - 10000 MHz RF/MICROWAVE THRESHOLD DETECTOR, 15 dBm INPUT POWER-MAX
HMC616LP3E 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC616LP3 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC617LP3E 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMC609_10 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
HMC609LC4 制造商:Hittite Microwave Corp 功能描述:IC MMIC LNA GAAS 24SMD
HMC609LC4_09 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
HMC609-SX 功能描述:IC MMIC LNA GAAS DIE 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):在售 頻率:2GHz ~ 4GHz P1dB:21dBm 增益:20.5dB 噪聲系數(shù):3dB RF 類型:雷達 電壓 - 電源:6V 電流 - 電源:170mA 測試頻率:2GHz ~ 4GHz 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標準包裝:2
HMC60DRAH 功能描述:CONN EDGECARD 120PS R/A .100 SLD RoHS:是 類別:連接器,互連式 >> Card Edge 系列:- 標準包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:36 位置數(shù):72 卡厚度:0.062"(1.57mm) 行數(shù):2 間距:0.100"(2.54mm) 特點:- 安裝類型:面板安裝 端子:焊接孔眼 觸點材料:磷青銅 觸點表面涂層:金 觸點涂層厚度:10µin(0.25µm) 觸點類型::全波紋管 顏色:藍 包裝:管件 法蘭特點:頂部安裝開口,螺紋插件,4-40 材料 - 絕緣體:聚對苯二甲酸丁二酯(PBT) 工作溫度:-65°C ~ 125°C 讀數(shù):雙