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參數(shù)資料
| 型號： | HMC580ST89ETR |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOT-89, SMT, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 203K |
| 代理商： | HMC580ST89ETR |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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8
8 - 150
Application Circuit
Recommended Component Values for Key Application Frequencies with Vs = +5V
Component
Frequency (MHz)
50
250
400
900
L1
270 nH
110 nH
56 nH
C1, C2
0.01 μF
820 pF
100 pF
Rbias
0 Ohms
1.5 Ohms
1.8 Ohms
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V
Supply Voltage (Vs)
6V
8V
RBIAS VALUE
13 Ω
36 Ω
RBIAS POWER RATING
W
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1IN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
OUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom
must be connected to RF/DC ground.
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
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