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參數(shù)資料
| 型號： | HMC559 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3.12 X 1.50 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 300K |
| 代理商： | HMC559 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
v03.0208
General Description
Features
Functional Diagram
The HMC559 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
20 GHz. The amplifier provides 14 dB of gain,
+36 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 400 mA
from a +10V supply. Gain flatness is slightly posi-
tive from 4 to 20 GHz making the HMC559 ideal for
EW, ECM and radar driver amplifier applications.
The HMC559 amplifier I/O’s are internally matched to
50 Ohms facilitating integration into Multi-Chip-Mod-
ules (MCMs). All data is taken with the chip connected
via two 0.075mm (3 mil) ribbon bonds of minimal length
0.31mm (12 mils).
P1dB Output Power: +28 dBm
Gain: 14 dB
Output IP3: +36 dBm
Supply Voltage: +10V @ 400 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.50 x 0.1 mm
Typical Applications
The HMC559 wideband PA is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
Electrical Specifications, T
A = +25° C, Vdd= +10V, Vgg2= +4V, Idd= 400 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
DC - 6
6 - 12
12 - 20
GHz
Gain
11
13
11
13.5
11.5
14
dB
Gain Flatness
±0.5
±1.5
dB
Gain Variation Over Temperature
0.01
0.02
0.01
0.02
0.03
dB/ °C
Input Return Loss
22
15
13
dB
Output Return Loss
16
8
dB
Output Power for 1 dB Compression (P1dB)
25
28
24.5
27.5
23
27
dBm
Saturated Output Power (Psat)
30
29
28.5
dBm
Output Third Order Intercept (IP3)
37
36
33
dBm
Noise Figure
4.5
3.5
4.5
dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
400
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
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| HMC559_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20 GHz |
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