參數(shù)資料
型號(hào): HMC523LC4
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GaAs MMIC I/Q MIXER 15 - 23 GHz
中文描述: 砷化鎵微波單片集成電路的I / Q混頻器15 - 23吉赫
文件頁數(shù): 4/6頁
文件大?。?/td> 329K
代理商: HMC523LC4
M
7
7 - 379
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Harmonics of LO
MxN Spurious Outputs
Absolute Maximum Ratings
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30 - 80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKLE
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND
7. CLASSIFIED AS A MOISTURE SENSITIVITY LEVEL (MSL) 1.
LO Freq. (GHz)
nLO Spur at RF Port
1
2
15.5
47
51
17
49
56
18.5
50
63
20
47
73
21.5
50
72
23
53
71
LO = + 15 dBm
Values in dBc below input LO level measured at RF Port.
nLO
mRF
0
1
2
3
4
0
xx
-9
29
xx
xx
1
34
0
46
61
xx
2
87
65
82
62
87
3
xx
87
92
86
90
4
xx
xx
84
92
92
RF = 17.6 GHz @ -10 dBm
LO = 17.5 GHz @ +15 dBm
Data taken without IF hybrid
All values in dBc below IF power level
RF / IF Input
+20 dBm
LO Drive
+ 27 dBm
Channel Temperature
150°C
Continuous Pdiss (T=85°C)
(derate 5.22 mW/°C above 85°C)
340 mW
Thermal Resistance (R
)
(junction to package bottom)
191.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 deg °C
ESD Sensitivity (HBM)
Class 1A
HMC523LC4
GaAs MMIC I/Q MIXER
15 - 23 GHz
v00.0405
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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