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參數(shù)資料
| 型號： | HMC523 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC I/Q MIXER 15 - 23.6 GHz |
| 中文描述： | 砷化鎵微波單片集成電路的I / Q混頻器15 - 23.6吉赫 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 335K |
| 代理商： | HMC523 |
M
3
3 - 141
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Harmonics of LO
LO Freq. (GHz)
nLO Spur at RF Port
1
2
15.5
47
51
17
49
56
18.5
50
63
20
47
73
21.5
50
72
23
53
71
LO = + 15 dBm
Values in dBc below input LO level measured at RF Port.
MxN Spurious Outputs
nLO
mRF
0
1
2
3
4
0
xx
-9
29
xx
xx
1
34
0
46
61
xx
2
87
65
82
62
87
3
xx
87
92
86
90
4
xx
xx
84
92
92
RF = 17.6 GHz @ -10 dBm
LO = 17.5 GHz @ +15 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input
+20 dBm
LO Drive
+ 27 dBm
Channel Temperature
150°C
Continuous Pdiss (T=85°C)
(derate 5.22 mW/°C above 85°C)
340 mW
Thermal Resistance (R
TH
)
(junction to die bottom)
191.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 deg °C
ESD Sensitivity (HBM)
Class 1A
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004”
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE ±.002”
Die Packaging Information
[1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC523
GaAs MMIC I/Q MIXER
15 - 23.6 GHz
v00.1104
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| HMC523_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC I/Q MIXER 15 - 23.6 GHz |
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