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參數(shù)資料
| 型號(hào)： | HMC522 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC I/Q MIXER 11 - 16 GHz |
| 中文描述： | 砷化鎵微波單片集成電路的I / Q混頻器11 - 16吉赫 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 313K |
| 代理商： | HMC522 |
M
3
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Harmonics of LO
LO Freq. (GHz)
nLO Spur at RF Port
1
2
3
4
10.5
43
46
52
80
11.5
48
49
61
76
12.5
48
51
63
61
13.5
44
60
67
xx
14.5
44
58
82
xx
15.5
43
51
75
xx
LO = + 15 dBm
Values in dBc below input LO level measured at RF Port.
MxN Spurious Outputs
nLO
mRF
0
1
2
3
4
0
xx
-4
18
18
xx
1
27
0
54
57
64
2
83
69
70
77
91
3
85
93
93
81
93
4
xx
86
93
92
93
RF = 13.6 GHz @ -10 dBm
LO = 13.5 GHz @ +15 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input
+20 dBm
LO Drive
+ 27 dBm
Channel Temperature
150°C
Continuous Pdiss (T=85°C)
(derate 6.9 mW/°C above 85°C)
452 mW
Thermal Resistance (R
TH
)
(junction to die bottom)
150 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 deg °C
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004”
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE ±.002”
Die Packaging Information
[1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC522
GaAs MMIC I/Q MIXER
11 - 16 GHz
v00.1104
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| HMC522_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC I/Q MIXER 11 - 16 GHz |
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