參數(shù)資料
型號: HMC520
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GaAs MMIC I/Q MIXER 6 - 10 GHz
中文描述: 砷化鎵微波單片集成電路的I / Q混頻器6 - 10千兆赫
文件頁數(shù): 4/6頁
文件大?。?/td> 318K
代理商: HMC520
M
3
3 - 123
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Harmonics of LO
LO Freq. (GHz)
nLO Spur at RF Port
1
2
3
4
5.5
40
41
51
54
6.5
44
48
45
69
7.5
52
62
55
68
8.5
52
66
58
55
9.5
46
59
69
47
10.5
47
60
62
xx
LO = + 15 dBm
Values in dBc below input LO level measured at RF Port.
MxN Spurious Outputs
nLO
mRF
0
1
2
3
4
0
xx
-6
37
21
61
1
31
0
47
60
68
2
90
69
72
69
90
3
90
90
90
79
90
4
90
90
90
90
90
RF = 7.6 GHz @ -10 dBm
LO = 7.5 GHz @ +15 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input
+20 dBm
LO Drive
+ 27 dBm
Channel Temperature
150°C
Continuous Pdiss (T=85°C)
(derate 7.8 mW/°C above 85°C)
508 mW
Thermal Resistance (R
TH
)
(junction to die bottom)
128.2 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 deg °C
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004”
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE ±.002”
Die Packaging Information
[1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC520
GaAs MMIC I/Q MIXER
6 - 10 GHz
v00.1004
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