參數(shù)資料
型號: HMC516LC5
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 9000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 5 X 5 MM, ROHS COMPLIANT, LEADLESS, ALUMINIUM, SMT, 32 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 214K
代理商: HMC516LC5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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8 - 141
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+4 Vdc
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
+5 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 14 mW/°C above 85 °C)
1.25 W
Thermal Resistance
(channel to die bottom)
71 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Vdd (Vdc)
Idd (mA)
+2.5
61
+3.0
65
+3.5
69
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage range shown
above.
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
HMC516LC5
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
v02.1208
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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