- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄65469 > HMC499 (HITTITE MICROWAVE CORP) 21000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER PDF資料下載
參數(shù)資料
| 型號： | HMC499 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 21000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 2.04 X 1.09 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 257K |
| 代理商： | HMC499 |
L
IN
E
A
R
&
P
O
W
E
R
A
M
P
L
IF
IE
R
S
-
C
H
IP
3
3 - 61
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC499
v03.0908
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC516LC5 | 9000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC520 | 6000 MHz - 10000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| HMC521 | 8500 MHz - 13500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| HMC522LC4 | 11000 MHz - 16000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
| HMC527LC4 | 8500 MHz - 13500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 10 dB CONVERSION LOSS-MAX |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC499_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz |
| HMC499LC4 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC499LC4_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz |
| HMC499LC4TR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP MED PWR 24SMD |
| HMC49DRAH | 功能描述:CONN EDGECARD 98POS R/A .100 SLD RoHS:是 類別:連接器，互連式 >> Card Edge 系列:- 標準包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:50 位置數(shù):100 卡厚度:0.062"（1.57mm） 行數(shù):2 間距:0.100"（2.54mm） 特點:- 安裝類型:通孔 端子:焊接 觸點材料:銅鈹 觸點表面涂層:金 觸點涂層厚度:30µin（0.76µm） 觸點類型：:全波紋管 顏色:綠 包裝:管件 法蘭特點:頂部安裝開口，無螺紋，0.125"（3.18mm）直徑 材料 - 絕緣體:聚苯硫醚（PPS） 工作溫度:-65°C ~ 150°C 讀數(shù):雙 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。