參數(shù)資料
型號(hào): HMC498LC4
廠商: 美國(guó)訊泰微波有限公司上海代表處
英文描述: GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz
中文描述: GaAs PHEMT的介質(zhì)功率放大器,17 - 24千兆赫
文件頁數(shù): 4/6頁
文件大?。?/td> 339K
代理商: HMC498LC4
A
5
5 - 515
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+5.5 Vdc
Gate Bias Voltage (Vgg)
-4.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+10 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 18 mW/°C above 85 °C)
1.62 W
Thermal Resistance
(channel to ground paddle)
55.6 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Vdd (Vdc)
Idd (mA)
+4.5
239
+5.0
250
+5.5
262
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 250 mA at +5.0V.
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
HMC498LC4
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 17 - 24 GHz
v00.0904
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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