參數(shù)資料
型號(hào): HMC441LC3B
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz
中文描述: GaAs PHEMT MMIC中功率放大器,6 - 18吉赫
文件頁數(shù): 4/6頁
文件大?。?/td> 259K
代理商: HMC441LC3B
8
A
8 - 203
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC441LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
v00.1104
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+6.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+20 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 10 mW/°C above 85 °C)
0.65 W
Thermal Resistance
(channel to ground paddle)
100 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Vdd (V)
Idd (mA)
+5.5
96
+5.0
95
+4.5
94
Note: Amplifier will operate over full voltage range shown above
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: COLD FLASH OVER Ni.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Typical Supply Current vs. Vdd
%,%#42/34!4)#3%.3)4)6%$%6)#%
/"3%26%(!.$,).'02%#!54)/.3
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