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參數(shù)資料
| 型號(hào)： | HMC426MS8 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | SMT SiGe MMIC DIVIDE-BY-4, DC - 4.0 GHz |
| 中文描述： | 貼片硅鍺MMIC的分頻4，直流- 4.0吉赫 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 226K |
| 代理商： | HMC426MS8 |
MICROWAVE CORPORATION
10 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
F
10
Output Voltage Waveform,
Pin= 0 dBm, Fout= 500 MHz, T= 25 °C
SMT SiGe MMIC
DIVIDE-BY-4, DC - 4.0 GHz
HMC426MS8
Absolute Maximum Ratings
Outline Drawing
Typical Supply Current vs. Vcc
Note: Divider will operate over full voltage range shown above
v00.0903
Vcc (V)
Icc (mA)
2.7
10
3.0
13
3.3
16
RF Input (Vcc = +3V)
+13 dBm
Vcc
+3.5V
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 7 mW/ °C above 85 °C)
460 mW
Thermal Resistance (R
TH
)
(junction to lead)
142 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
-500
-400
-300
-200
-100
0
100
200
300
400
500
24.6
25
25.4
25.8
26.2
26.6
27
27.4
27.8
A
TIME (nS)
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Input Return Loss
-35
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
R
INPUT FREQUENCY (GHz)
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| HMC426MS8_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT SiGe MMIC DIVIDE-BY-4, DC - 4 GHz |
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