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參數(shù)資料
| 型號(hào)： | HMC424G16 |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 3 GHz |
| 中文描述： | 0.5dB的LSB的砷化鎵MMIC的6位數(shù)字衰減器，直流- 3千兆赫 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 213K |
| 代理商： | HMC424G16 |
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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HMC424
0.5dB LSB GaAs MMIC 6-BIT DIGITAL
ATTENUATOR, DC - 13 GHz
v02.0404
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has
fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265
deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose
the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing
should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter
of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as
possible <0.31 mm (12 mils).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC424G16_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 3 GHz |
| HMC424G16TR | 功能描述:RF Attenuator 31.5dB 0 ~ 3GHz 50 Ohm 16-LQFP 制造商:analog devices inc. 系列:- 零件狀態(tài):過期 衰減值:31.5dB 容差:- 頻率范圍:0 ~ 3GHz 功率（W）:- 阻抗:50 歐姆 封裝/外殼:16-LQFP 標(biāo)準(zhǔn)包裝:1 |
| HMC424LH5 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 13 GHz |
| HMC424LH5_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 13 GHz |
| HMC424LH5TR | 功能描述:RF Attenuator 31.5dB ±0.5dB 0 ~ 13GHz 50 Ohm 180mW 12-SMD (No Lead) 制造商:analog devices inc. 系列:- 零件狀態(tài):過期 衰減值:31.5dB 容差:±0.5dB 頻率范圍:0 ~ 13GHz 功率（W）:180mW 阻抗:50 歐姆 封裝/外殼:12-SMD（無引線） 標(biāo)準(zhǔn)包裝:1 |
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