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參數(shù)資料
| 型號： | HMC415LP3 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 砷化鎵的InGaP HBT MMIC功率放大器，四月九日至5月九號吉赫 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 309K |
| 代理商： | HMC415LP3 |
MICROWAVE CORPORATION
8 - 192
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC415LP3
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v02.0604
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
Collector Bias Voltage (Vcc)
+5.0 Vdc
Control Voltage (Vpd)
+3.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +3.0 Vdc)
+20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 17 mW/°C above 85 °C)
1.105 W
Thermal Resistance
(junction to ground paddle)
59 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
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| HMC416LP4 | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
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| HMC421QS16 | PCS/UMTS HIGH IP3 RFIC DOWNCONVERTER, 1.4 - 2.3 GHz |
| HMC422MS8 | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.2 - 2.5 GHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC415LP3_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz |
| HMC415LP3E | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP 5-6GHZ 16-QFN |
| HMC415LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC415 Series 4.9 - 5.9 GHz GaAs InGaP HBT MMIC Power Amplifier - QFN-16 |
| HMC416LP4 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz |
| HMC416LP4_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz |
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