- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄367211 > HMC414MS8G (美國(guó)訊泰微波有限公司上海代表處) GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz PDF資料下載
參數(shù)資料
| 型號(hào)： | HMC414MS8G |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz |
| 中文描述： | 砷化鎵的InGaP HBT MMIC功率放大器，2.2 - 2.8吉赫 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 364K |
| 代理商： | HMC414MS8G |
MICROWAVE CORPORATION
8 - 178
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
Outline Drawing
Absolute Maximum Ratings
HMC414MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v02.1202
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd1, Vpd2)
+4.0 Vdc
RF Input Power (RFin)(Vs = +5.0,
Vpd = +3.6 Vdc)
+20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 27 mW/°C above 85 °C)
1.755 W
Thermal Resistance
(junction to ground paddle)
37 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC415LP3 | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC416LP4 | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC420QS16 | CELLULAR RFIC DOWNCONVERTER, 0.7 - 1.0 GHz |
| HMC421QS16 | PCS/UMTS HIGH IP3 RFIC DOWNCONVERTER, 1.4 - 2.3 GHz |
| HMC422MS8 | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.2 - 2.5 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC414MS8G_01 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz |
| HMC414MS8G_09 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz |
| HMC414MS8GE | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP 2.1-3.2GHZ 8-MSOP |
| HMC414MS8GETR | 制造商:Hittite Microwave Corp 功能描述:HMC414 Series 2.2 - 2.8 GHz HBT MMIC Power Amplifier - MSOP-8EP |
| HMC415LP3 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。