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參數(shù)資料
| 型號(hào)： | HMC406MS8G |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz |
| 中文描述： | 砷化鎵的InGaP HBT MMIC功率放大器，5.0 - 6.0吉赫 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 259K |
| 代理商： | HMC406MS8G |
MICROWAVE CORPORATION
8 - 145
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC406MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v02.1202
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd)
+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
+20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 32 mW/°C above 85 °C)
2.1 W
Thermal Resistance
(junction to ground paddle)
31 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85° C
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC406MS8G_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz |
| HMC406MS8G_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz |
| HMC406MS8GE | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP HBT INGAP 8-MSOP |
| HMC407MS8G | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz |
| HMC407MS8G_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz |
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