參數(shù)資料
型號(hào): HMC383LC4
廠商: 美國(guó)訊泰微波有限公司上海代表處
英文描述: GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz
中文描述: GaAs PHEMT MMIC中功率放大器,12 - 30千兆赫
文件頁數(shù): 4/6頁
文件大小: 338K
代理商: HMC383LC4
A
5
5 - 139
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+10 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 10 mW/°C above 85 °C)
0.92 W
Thermal Resistance
(channel to ground paddle)
98 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Vdd (V)
Idd (mA)
+4.5
99
+5.0
100
+5.5
101
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL.
3. ALL DIMENSIONS ARE IN INCHES [MM]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
HMC383LC4
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
v00.0405
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