參數(shù)資料
型號(hào)： HMC383
廠商： 美國(guó)訊泰微波有限公司上海代表處
英文描述： GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz
中文描述： GaAs PHEMT MMIC中功率放大器，12 - 30千兆赫
文件頁(yè)數(shù)： 5/8頁(yè)
文件大小： 366K
代理商： HMC383
A
1
1 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pad is AC coupled and matched to
50 Ohms from 12 - 30 GHz.
2
Vdd
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
3
RFOUT
This pad is AC coupled and matched to
50 Ohms from 12 - 30 GHz.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Outline Drawing
Die Packaging Information
[1]
Standard
Alternate
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
HMC383
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
v01.0606
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HMC383_09 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz
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HMC383LC4_08 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz
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