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參數(shù)資料
| 型號： | HMC375LP3 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, LEADLESS, PLASTIC, SMT, QFN-16 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 213K |
| 代理商： | HMC375LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
v03.0610
General Description
Features
Functional Diagram
The HMC375LP3 & HMC375LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 0.9 dB noise
figure, 17 dB gain and +33 dBm output IP3 from
a single supply of +5V @ 136mA. Input and output
return losses are 14 dB typical with the LNA requiring
minimal external components to optimize the RF input
match, RF ground and DC bias. For applications
which require improved noise figure, please see the
HMC618LP3(E).
Noise Figure: 0.9 dB
Output IP3: +34 dBm
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5V @ 136 mA
50 Ohm Matched Output
Electrical Specifications, T
A = +25° C, Vs = +5V
Typical Applications
The HMC375LP3 / HMC375LP3E is ideal for
basestation receivers:
GSM, GPRS & EDGE
CDMA & W-CDMA
DECT
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
1.8 - 1.9
1.9 - 2.0
2.0 - 2.1
2.1 - 2.2
GHz
Gain
16.5
18.5
15.5
17.5
15
17
13
15
dB
Gain Variation Over Temperature
0.014
0.021
0.014
0.021
0.014
0.021
0.014
0.021
dB/°C
Noise Figure
1.0
1.35
0.95
1.2
0.9
1.2
0.9
1.3
dB
Input Return Loss
12
13
14
15
dB
Output Return Loss
13
16
11
8
dB
Reverse Isolation
35
34
dB
Output Power for
1dB Compression (P1dB)
16
18.5
16
18.5
15
18
14.5
17.5
dBm
Saturated Output Power (Psat)
19.5
dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
34
33.5
33
32.5
dBm
Supply Current (Idd)
136
mA
相關PDF資料 |
PDF描述 |
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| HMC375LP3E | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| HMC376LP3E | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC376LP3 | 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC386LP4 | 2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HMC375LP3_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
| HMC375LP3_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
| HMC375LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA HI IP3 16-QFN |
| HMC375LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC375 Series 1.7 - 2.2 GHz GaAs PHEMT MMIC Low Noise Amplifier - QFN-16 |
| HMC376LP3 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz |
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