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參數(shù)資料
| 型號： | HMC349MS8GE |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 開關(guān) |
| 英文描述： | 0 MHz - 4000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 2.1 dB INSERTION LOSS |
| 封裝： | ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 214K |
| 代理商： | HMC349MS8GE |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC349MS8G / 349MS8GE
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4 GHz
v02.0607
General Description
Features
Functional Diagram
High Isolation: 70 dB @ 1 GHz
57 dB @ 2 GHz
Single Positive Control: 0/+5V
+52 dBm Input IP3
Non-Reflective Design
All Off State
Ultra Small MS8G SMT Package: 14.8 mm2
Included in the HMC-DK005 Designer’s Kit
Typical Applications
The HMC349MS8G / HMC349MS8GE is ideal for:
Basestation Infrastructure
MMDS & 3.5 GHz WLL
CATV/CMTS
Test Instrumentation
The HMC349MS8G & HMC349MS8GE are high
isolation non-reflective DC to 4 GHz GaAs MESFET
SPDT switches in low cost 8 lead MSOP8G surface
mount packages with exposed ground paddles.
The switch is ideal for cellular/PCS/3G basestation
applications yielding 50 to 60 dB isolation, low
0.8 dB insertion loss and +52 dBm input IP3. Power
handling is excellent up through the 3.5 GHz WLL
band with the switch offering a P1dB compression
point of +31 dBm. On-chip circuitry allows a single
positive voltage control of 0/+5 Volts at very low DC
currents. An enable input (EN) set to logic high will
put the switch in an “all off” state.
Electrical Specifications, T
A = +25° C, Vctl =
0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.8
0.9
1.2
1.8
1.1
1.2
1.5
2.1
dB
Isolation (RFC to RF1/RF2)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
60
54
45
42
70
57
50
47
dB
Return Loss (On State)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
23
18
13
8
dB
Return Loss (Off State)
0.5 - 2.0 GHz
0.5 - 3.0 GHz
0.5 - 4.0 GHz
20
17
14
dB
Input Power for 1 dB Compression
0.25 - 4.0 GHz
27
31
dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0.25 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
53
50
49
47
dBm
Switching Speed
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
40
120
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC349MS8GETR | 制造商:Hittite Microwave Corp 功能描述:IC GAAS MESFET SW SPDT 8MSOP 制造商:Hittite Microwave Corp 功能描述:HMC349 Series DC - 4.0 GHz GaAs MMIC SPDT Non Reflective CATV Switch - MSOP-8EP |
| HMC350MS8 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER, 0.6 - 1.2 GHz |
| HMC350MS8_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER, 0.6 - 1.2 GHz |
| HMC350MS8_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC HIGH IP3 SINGLE BALANCED MIXER, 0.6 - 1.2 GHz |
| HMC351S8 | 制造商:HITMIC 功能描述: |
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