參數(shù)資料
型號: HMC349LP4C
廠商: 美國訊泰微波有限公司上海代表處
英文描述: HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz
中文描述: 高隔離度單刀雙擲非反射開關,直流- 4.0吉赫
文件頁數(shù): 3/6頁
文件大?。?/td> 213K
代理商: HMC349LP4C
MICROWAVE CORPORATION
14 - 226
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
S
14
HMC349LP4C
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4.0 GHz
v00.0304
Truth Table
Absolute Maximum Ratings
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Control Input
Signal Path State
Vctl
EN
RFC - RF1
RFC - RF2
Low
Low
OFF
ON
High
Low
ON
OFF
Low
High
OFF
OFF
High
High
OFF
OFF
Outline Drawing
TTL/CMOS Control Voltages
State
Bias Condition
Low
0 to +0.8 Vdc @ <1 μA Typical
High
+2.0 to +5.0 Vdc @ 30 μA Typical
RF Input Power (Vctl = 0V/+5V)
(0.25 - 4 GHz)
+30 dBm (T = +85 °C)
Supply Voltage Range (Vdd)
+7 Vdc
Control Voltage Range (Vctl)
-1V to Vdd +1V
Hot Switch Power Level
(Vdd = +5V)
+30 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 12 mW/°C above 85 °C)
0.75 W
Thermal Resistance
87 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
Vdd Range = +5.0 Vdc ± 10%
Vdd
(Vdc)
Idd (Typ.)
(mA)
Idd (Max.)
(mA)
+5.0
2.3
5.0
Bias Voltage & Current
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