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參數(shù)資料
| 型號： | HMC346LP3 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 砷化鎵MMIC電壓可變衰減器，直流- 14千兆赫 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 252K |
| 代理商： | HMC346LP3 |
MICROWAVE CORPORATION
2 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
2
v01.0304
HMC346
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
External op-amp control circuit maintains
impedance match while attenuation is varied.
Input control ranges from 0 Volts (min.
attenuation) to -3.0 Volts (max. attenuation.)
Single-Line Control Driver
Assembly Diagram
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling,
Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing
RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-
substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC346G8 | GaAs MMIC HERMETIC SMT VOLTAGEVARIABLE ATTENUATOR, DC - 8 GHz |
| HMC347G8 | Battery Charger; Series:Energizer Energi To Go; Battery Size Code:AA RoHS Compliant: Yes |
| HMC347C8 | GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz |
| HMC347 | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC347LP3 | GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 14.0 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC346LP3_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 14 GHz |
| HMC346LP3_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 14 GHz |
| HMC346LP3E | 制造商:Hittite Microwave Corp 功能描述:IC ATTENUATOR DC-15GHZ 16-QFN |
| HMC346MS8G | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR, DC - 8 GHz |
| HMC346MS8G_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR, DC - 8 GHz |
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