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參數(shù)資料
| 型號： | HMC346C8 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC SMT VOLTAGEVARIABLE ATTENUATOR, DC - 8 GHz |
| 中文描述： | 砷化鎵微波單片集成電路表面貼裝VOLTAGEVARIABLE衰減器，直流- 8千兆赫 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 252K |
| 代理商： | HMC346C8 |
MICROWAVE CORPORATION
2 - 7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
2
v01.0304
HMC346
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip
has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of
265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 sec-
onds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter
of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm
(12 mils).
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| HMC346LP3 | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
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| HMC347G8 | Battery Charger; Series:Energizer Energi To Go; Battery Size Code:AA RoHS Compliant: Yes |
| HMC347C8 | GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC346C8_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR, DC - 8 GHz |
| HMC346G8 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC HERMETIC SMT VOLTAGE-VARIABLE ATTENUATOR, DC - 8 GHz |
| HMC346G8_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC HERMETIC SMT VOLTAGEVARIABLE ATTENUATOR, DC - 8 GHz |
| HMC346G8_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC HERMETIC SMT VOLTAGE-VARIABLE ATTENUATOR, DC - 8 GHz |
| HMC346G8TR | 功能描述:RF Attenuator 30dB 0 ~ 8GHz 50 Ohm 8-SMD, Gull Wing 制造商:analog devices inc. 系列:- 零件狀態(tài):生命周期結(jié)束 衰減值:30dB 容差:- 頻率范圍:0 ~ 8GHz 功率（W）:- 阻抗:50 歐姆 封裝/外殼:8-SMD，鷗翼型 標(biāo)準(zhǔn)包裝:1 |
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