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參數(shù)資料
| 型號(hào)： | HMC338 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 砷化鎵微波單片集成電路二次諧波泵混合器，26 - 33千兆赫 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 295K |
| 代理商： | HMC338 |
MICROWAVE CORPORATION
5 - 109
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
M
5
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or
fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically con-
ductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C.
DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically
bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are
recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams.
All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic
energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12
mils (0.31 mm).
HMC338
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 26 - 33 GHz
v01.0803
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC339 | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC340LP5 | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC341LC3B | SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz |
| HMC341 | GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz |
| HMC342LC4 | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC338_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz |
| HMC338LC3B | 制造商:Hittite Microwave Corp 功能描述:IC MIXER SUB-HARMONIC 12SMD |
| HMC338LC3B_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONIC SMT MIXER, 24 - 34 GHz |
| HMC338-SX | 功能描述:IC MIXER SUB-HARMONIC DIE 制造商:analog devices inc. 系列:- 包裝:散裝 零件狀態(tài):在售 RF 類型:通用 頻率:26GHz ~ 33GHz 混頻器數(shù):1 增益:- 噪聲系數(shù):9dB 輔助屬性:升/降頻器 電流 - 電源:28mA 電壓 - 電源:3 V ~ 4 V 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC339 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 33 - 42 GHz |
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