- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄367209 > HMC331 (美國(guó)訊泰微波有限公司上海代表處) GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT PDF資料下載
參數(shù)資料
| 型號(hào)： | HMC331 |
| 廠(chǎng)商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT |
| 中文描述： | 砷化鎵微波單片集成電路被動(dòng)倍頻，12 - 18吉赫的輸入 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | HMC331 |
MICROWAVE CORPORATION
4 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
F
4
v02.1201
HMC331
GaAs MMIC FREQUENCY
DOUBLER, 12 - 18 GHz INPUT
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid clean-
ing systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients
: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent
tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet,
tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool tempera-
ture of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C.
DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically
bonded with a force of 40 - 60 grams. DC bonds of 0.001” (0.025mm) diameter, thermosonically bonded,
are recommended. Ball bonds should be made with a force of 40 - 50 grams and wedge bonds at 18 - 22
grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultra-
sonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less
than 12 mils (0.31 mm).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC332 | 600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC333 | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC334LP4 | SiGe WIDEBAND DOWNCONVERTER, 0.8 - 2.7 GHz |
| HMC334LP4E | SiGe WIDEBAND DOWNCONVERTER, 0.8 - 2.7 GHz |
| HMC335G16 | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC331_08 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT |
| HMC331_09 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT |
| HMC332 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz |
| HMC332_05 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz |
| HMC332_06 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。