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參數(shù)資料
| 型號： | HMC322 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz |
| 中文描述： | 砷化鎵微波單片集成電路SP8T非反射開關，直流- 10.0千兆赫 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 177K |
| 代理商： | HMC322 |
MICROWAVE CORPORATION
7 - 19
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7
S
HMC322
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10.0 GHz
v00.0303
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and
flat.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HMC322_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz |
| HMC322_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10 GHz |
| HMC322ALP4E | 功能描述:RF Switch IC SP8T 8GHz 50 Ohm 24-QFN (4x4) 制造商:analog devices inc. 系列:- 包裝:剪帶 零件狀態(tài):有效 頻率?- 下:0Hz 頻率?- 上:8GHz 隔離 @ 頻率:40dB @ 6GHz（標準） 插損 @ 頻率:2.5dB @ 8GHz IIP3:40dBm（標準） 拓撲:吸收性 電路:SP8T P1dB:26dBm 特性:- 阻抗:50 歐姆 工作溫度:-40°C ~ 85°C 電壓 - 電源:- RF 類型:- 封裝/外殼:24-VFQFN 裸露焊盤 供應商器件封裝:24-QFN（4x4） 標準包裝:1 |
| HMC322ALP4ETR | 功能描述:IC SWITCH SP8T 8GHZ NEG 24-QFN 制造商:analog devices inc. 系列:* 包裝:剪切帶（CT） 零件狀態(tài):在售 封裝/外殼:24-VFQFN 裸露焊盤 供應商器件封裝:24-QFN（4x4） 標準包裝:1 |
| HMC322LP4 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8.0 GHz |
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