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參數(shù)資料
| 型號： | HMC320MS8G |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC LOW NOISE AMPLIFIER , 5.0 - 6.0 GHz |
| 中文描述： | 砷化鎵MMIC低噪聲放大器，5.0 - 6.0吉赫 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 236K |
| 代理商： | HMC320MS8G |
MICROWAVE CORPORATION
8 - 95
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC320MS8G
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
v00.0900
Adaptive Biasing
Applying the adaptive biasing
A dynamically controlled bias can be implemented with this design. A typical application wil include
sensing an RF signal level and then adjusting the VSET. The bias adjustment can be accomplished by
either analog or digitals means, after the RF signal has been detected and translated to a DC voltage
using external power detection circuitry.
Optimizing P1dB Performance
The bias level may be changed to adjust the P1dB and return loss performance. The table below contains the
HMC320MS8G RF performance as a function of various VSET and RBIAS settings. It will be necessary for the VSET
voltage source to provide 100uA of current to the amplifier. The Idd and Vdd quiescent performance will not change
as a function of changing the VSET voltage.
RF Performance at 5.8 GHz (Vdd = +3V)
Schematic
VSET
(VDC)
RBIAS Resistor
Between Pin 3 and
GND (Ohms)
Idd (mA)
Output
P1dB (dBm)
Output
Return Loss
(dB)
0
174
7
1.0
16.0
3
23
25
9.0
12.0
3
7
40
13.0
15.0
3
GND
(No Resistor)
60
14.0
15.0
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相關代理商/技術參數(shù) |
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| HMC320MS8G_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER , 5.0 - 6.0 GHz |
| HMC320MS8G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz |
| HMC320MS8GE | 制造商:Hittite Microwave Corp 功能描述:IC AMP MMIC LNA 5.0-6.0GHZ 8MSOP |
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