參數(shù)資料
型號(hào): HMC307QS16G
廠商: 美國訊泰微波有限公司上海代表處
英文描述: ER 16C 14#12 2#8 SKT PLUG
中文描述: 砷化鎵微波單片集成電路1dB的LSB的5位數(shù)字衰減器,直流- 4千兆赫
文件頁數(shù): 3/6頁
文件大?。?/td> 206K
代理商: HMC307QS16G
MICROWAVE CORPORATION
9 - 52
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
9
HMC307QS16G
1 dB LSB GaAs MMIC 5-BIT DIGITAL
ATTENUATOR, DC - 4 GHz
v06.0503
Application Circuit
Truth Table
Control Voltage
DC Blocking Capacitors C1 & C2 are
required on RF1 & RF2. Choose C1 = C2 =
100 pF ~ 0.1 uF to allow lowest customer
specific frequency to pass with minimal
loss. R1= 5K Ohm is required to supply
voltage to the circuit through either Pin 11
or Pin 14.
Bias Voltage & Current
Suggested Driver Circuit
(One Circuit Required Per Bit Control Input)
Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current. * Recommended value
to suppress unwanted RF signals at V1 - V5 control lines.
Control Voltage Input
Attenuation
State
RF1 - RF2
V1
16 dB
V2
8 dB
V3
4 dB
V4
2 dB
V5
1 dB
Low
Low
Low
Low
Low
Reference I.L.
Low
Low
Low
Low
High
1 dB
Low
Low
Low
High
Low
2 dB
Low
Low
High
Low
Low
4 dB
Low
High
Low
Low
Low
8 dB
High
Low
Low
Low
Low
16 dB
High
High
High
High
High
31 dB
Max. Atten.
Any combination of the above states will provide an attenuation
approximately equal to the sum of the bits selected.
State
Bias Condition
Low
0 to -3V @ 70 uA Typ.
High
Vee + 0.8V @ 5 uA Typ.
Note: Vee = -5V
±
10%
Vee Range = -5.0 Vdc
±
10%
Vee
(VDC)
lee (Typ.)
(mA)
lee (Max.)
(mA)
-5.0
3
6
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