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參數(shù)資料
| 型號： | HMC294 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz |
| 中文描述： | GaAs MMIC雙平衡混頻器，25 - 40千兆赫 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 174K |
| 代理商： | HMC294 |
MICROWAVE CORPORATION
5 - 81
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
M
5
Handling Precautions
Follow these precautions to avoid permanent damage.
HMC294
v01.0300
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ribbon bond with 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage tem-
perature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the
minimum level of ulrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible
<0.31mm (12 mils).
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PDF描述 |
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| HMC296MS8 | LOW LO DRIVE DOUBLE-BALANCED FET MIXER, 1.1 - 1.7 GHz |
| HMC300LM1 | SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz |
| HMC304MS8 | GaAs MMIC HIGH IP3 SINGLEBALANCED SMT MIXER, 1.7 - 3 GHz |
| HMC305LP4 | 0.5 dB LSB GaAs MMIC 5-BIT SERIAL CONTROL DIGITAL ATTENUATOR, 0.7 - 3.8 GHz |
| HMC305LP4E | 0.5 dB LSB GaAs MMIC 5-BIT SERIAL CONTROL DIGITAL ATTENUATOR, 0.7 - 3.8 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC294_00 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz |
| HMC294_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz |
| HMC296MS8 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:LOW LO DRIVE DOUBLE-BALANCED FET MIXER, 1.1 - 1.7 GHz |
| HMC296MS8_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:LOW LO DRIVE DOUBLE-BALANCED FET MIXER, 1.1 - 1.7 GHz |
| HMC300LM1 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz |
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